A COMPUTER SIMULATION OF HIGH-DOSE ION IMPLANTATION INTO AMORPHOUS MATERIALS

A COMPUTER SIMULATION OF HIGH-DOSE ION IMPLANTATION INTO AMORPHOUS MATERIALS

Yuan Bo
Yu Fuchun
Nuclear Science and TechniquesVol.1, No.1-2pp.82-83Published in print 01 May 1990
4100

A computer program MACA was developed for simulating high - dose ion implantation into amorphous solids. The topology of amorphous solids was modelled by adjusting the free flight path distribution between collisions, so that the radial distribution function will characterize the short - range order and long - range disorder of amorphous targets. A simulation example is given.

Simulation of high-dose ion implantationAmorphous target topology modellingMACA code
REFERENCES
[1] R. Zallen, The physics of amorphous solids, John Wiley & Sons, Inc., 1983.
[2] J.F. Ziegler et al., The stopping and range of ions in solids, Pergamon Press, 1985.