Thin relaxed SiGe layer grown on Ar+ ion implanted Si substrate by ultra-high vacuum chemical vapor deposition

LOW ENERGY ACCELERATOR, RAY TECHNOLOGY AND APPLICATIONS

Thin relaxed SiGe layer grown on Ar+ ion implanted Si substrate by ultra-high vacuum chemical vapor deposition

CHEN Chang-Chun，

YU Ben-Hai，

LIU Jiang-Feng，

CAO Jian-Qing，

ZHU De-Zhang

Nuclear Science and Techniques

Vol.16, No.3

pp.149-152

Published in print 01 Jun 2005

CLC：TN32

55600

Thin strain-relaxed Si_0.81Ge_0.19 films (95 nm) on the Ar⁺ ion implanted Si substrates with different energies (30 keV, 40 keV and 60 keV) at the same implanted dose (3×10¹⁵cm^-2) were grown by ultra high vacuum chemical vapor deposition (UHVCVD). Rutherford backscattering/ion channeling (RBS/C), Raman spectra as well as atomic force microscopy (AFM) were used to characterize these SiGe films. Investigations by RBS/C demonstrate that these thin Si_0.81Ge_0.19 films were epitaxially grown on the Ar⁺ ion implanted Si substrates, although there existed lots of crystal defects. The relaxation extent of Si_0.81Ge_0.19 films on the Ar⁺ implanted Si substrates is larger than that in the unimplanted case, which were verified by Raman spectra. Considering the relaxation extent of strain, surface roughness and crystal defects in these SiGe films, the thin relaxed SiGe film on the 30 keV Ar⁺ implanted Si substrate is optimal.

Strain relaxationUltra high vacuum chemical vapor depositionIon implantationSiGe

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