LATTICE LOCATION DETERMINATION OF TRACE AMOUNT CARBON IN GALLIUM ARSENIDE BY THEORETICAL CALCULATION OF CPAA WITH CHANNELING

Wei Luncun，

Bao Shanglian，

Yang Qixiang，

Yang Xihong

Nuclear Science and Techniques

Vol.2, No.4

pp.211-219

Published in print 01 Nov 1991

32801

Combining the charged particle activation analysis (CPAA) and the channeling technique, partial concentrations of carbon on different crystal lattice locations of GaAs were calculated. The results show that at lower total concentration (≈0.3 ppm), carbon atoms occupy principally the octahedral and displaced octahedral interstitial positions, but at higher total concentration (≈2 ppm), the substitutional carbon plays a principal role.

CPAAChanneling techniqueImpurity carbonGaAs

REFERENCES

[1]

M. Valladon et al., J. Radioanal. Chem., 58 (1980), 169.

[2]

G. Blondiaux et al., IEEE Trans. Nucl. Sci., NS-28 (1980), 2: 1675.

[3]

L.C. Wei et al., Nucl. Instr. Meth., B24/25 (1987), 999.

[4]

C. Koemmerer, Thesis of Orleans University, 1982.

[5]

M. Valladon, Thesis of Orleans University, 1980.

[6]

M.A. Misdaq, Thesis of Orleans University, 1985.

[7]

M.A. Misdaq et al., Nucl. Instr. Meth., B15 (1986), 328.

[8]

L.C. Feldman et al., Materials analysis by ion channeling, Academic Press, New York, 1982.

[9]

R.J. Jaszczak et al., Phys. Rev., 181 (1969), 1428.

[10]

J.S. Williams et al., Nucl. Instr. Meth., B30 (1988), 480.

[11]

J.F. Ziegler ed., The stopping and ranges of ions in matter various volumes, 1977, 1980 and 1985, Pergamon Press, New York.

[12]

W.M. Theis et al., Appl. Phys. Lett., 41 (1982), 1: 70.