Fabrication of thick BOX SOI by Smart-cut technology

LOW ENERGY ACCELERATOR, RAY TECHNOLOGY AND APPLICATIONS

Fabrication of thick BOX SOI by Smart-cut technology

WU Yan-Jun，

ZHANG Miao，

AN Zheng-Hua，

LIN Cheng-Lu

Nuclear Science and Techniques

Vol.14, No.2

pp.115-118

Published in print 01 May 2003

CLC：TN304.05,TN304.1+2,O766+.1

40800

A SOI material with thick BOX (2.2 μm) was successfully fabricated using the smart-cut technology. The thick BOX SOI microstructures were investigated by high resolution cross-sectional transmission electron microscopy (XTEM), while the electrical properties were studied by the spreading resistance profile (SRP). Experimental results demonstrate that both structural and electrical properties of the SOI structure are very good.

SOIThick BOXSmart-cut

References

[1]

Colinge J P. Silicon-on-insulator technology, 2nd ed, Kluwer, 1997

[2]

Cheng X B, Zhang B, Li Z J. Solid state Electron, 1992, 35(9): 1365

[3]

Liu Q Y, Li Z J, Zhang B et al.

The research on breakdown voltage of high voltage SOI LDMOS devices with shielding trench

, Solid-state and Integrated Circuit Technology Proceedings, Shanghai, CHINA, 2001, 1: 159

Baidu Scholar

Google Scholar

[4]

Lee J D, Park J C, Venables D et al. Mat Res Soc Symp Proc, Pittsburgh, 1994, 316: 753

[5]

Krause S, Anc M, Roitman P. MRS BULLETIN, 1998, 23(12): 25

[6]

Yu Y H, Lin C L, Zhang SK et al, Acta Phys Sin (in Chinese), 1989, 38: 1996

[7]

Ruffel J P, Douglas-Hamilton D H, Kaim R E. Nucl Instrum Methods, 1987, B21: 229

[8]

Stephens K G, Reeson K J, Sealy B J et al. Nucl Instrum Methods, 1990, B50: 368

[9]

Letavic T J, Baumgart H, Pinker P et al.

Thermomechanical device processing issues in bonded SOI wafers

, Proceedings of 1st International Symposium on semiconductor Wafer Bonding: Science, Technology., and Applications, The Electrochemical Society, Pennington, NJ, 1992, 92-7: 397

Baidu Scholar

Google Scholar

[10]

Tong Q Y, Cha G, Gafiteanu R et al. J Microelectromech Syst, 1994, 3: 29