ELASTIC RECOIL DETECTION ANALYSIS OF LIGHT ELEMENTS IN THIN FILMS USING 35 MeV 35Cl6+ BEAM

ELASTIC RECOIL DETECTION ANALYSIS OF LIGHT ELEMENTS IN THIN FILMS USING 35 MeV ³⁵Cl⁶⁺ BEAM

Yang Xihong，

Wei Luncun，

Li Renxing，

Yu Jinxiang，

Liang Bin，

Ren Xiaotang，

Wang Zhaojiang，

Hong Xiuhua，

Zhang Lichun

Nuclear Science and Techniques

Vol.3, No.3

pp.175-181

Published in print 01 Aug 1992

42800

In this paper, an elastic recoil detection analysis method is described using 35 MeV ³⁵Cl as incident ions. This method can determine and profile simultaneously H, D, He, C and O or in the other case, H, C, N and O. The depth resolution for the elements heavier than He is better than 20 nm. It has been applied to study the Co/Si and TiN thin films, and the depth profiles of He implanted in monocrystal silicon.

Elastic recoil detection analysisDepth ResolutionMass resolutionHe implantation profileCo/Si and TiN thin films

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