Nuclear Science and Techniques

DEPTH PROFILING OF ¹H AND/OR ⁴He IN SOLIDS BY ERD WITH ¹⁹F IONS

Zhu Peiran，

Liu Jiarui，

Ren Mengmei，

Feng Aigou，

Li Dawan

Nuclear Science and Techniques

Vol.1, No.1-2

pp.65-69

Published in print 01 May 1990

3900

¹H or ⁴He depth profiling in ¹H or ⁴He implanted silicon samples was performed by elastic recoil detection (ERD) with multicharged ¹⁹F ions at a small accelerator. Optimization of the experimental parameters such as incident ions energy and scattering geometry were calculated by computer simulation. Depth resolution of about 20-30nm at depth of 400nm for ¹H and at depth of 300nm for ⁴He can be obtained, respectively.

Elastic recoil detectionDepth profiling

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Liu Jiarui et al., Aeta Phys. Sinica, 37 (1988), 71.

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J. Ziegler et al., The Stopping and range of ions in matter. Plenum Press, 1985.

DEPTH PROFILING OF 1H AND/OR 4He IN SOLIDS BY ERD WITH 19F IONS

DEPTH PROFILING OF ¹H AND/OR ⁴He IN SOLIDS BY ERD WITH ¹⁹F IONS